Climb of dislocations in GaAs by irradiation

Climb of dislocation dipoles within GaAs during electron beam irradiation has been observed by high resolution transmission electron microscopy. In particular, 90° Shockley partials of α- and β-type forming part of a faulted dipole climbed through absorption of interstitials, with the β-partial showing a greater extent of climb for the same conditions of irradiation. Dislocation climb initiated with the formation of perfect dislocation loops located on the partial dislocations.