Low-energy nitrogen-ion doping into GaAs and its optical properties

Nitrogen (N) ions were impinged during the epitaxial growth of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) method. Low-temperature photoluminescence measurements showed that incorporated nitrogen ([N]<∼1×1018 cm−3) is optically active with a substrate temperature of 550°C and a N+ ion acceleration energy of 100 eV. For higher [N] of ∼2×1018 cm−3, N-related emissions can be found after high temperature (650–850°C) annealing. We discuss the annealing effects and also the novel emissions found after annealing at high temperature (750°C) with a [N] of ∼1×1019 cm−3.