Preparation of (001)-oriented PZT thick films on silicon wafer by pulsed laser deposition

Completely (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) films up to ∼10 μm thick, deposited on (100) silicon wafers with Y-stabilized ZrO2 (YSZ) as buffer and YBCO as electrode, are prepared by using pulsed laser deposition. The X-ray rocking curve scanning with respect to (001) reflection of 6.0-μm thick films exhibits the FWHM of only 0.6–0.7°. Small grain size and smooth surface of the as-prepared films were identified. The performance of YSZ as excellent resisting layer against silicon diffusion was confirmed by the SIMS measurements. The electrical property evaluations demonstrated quite good ferroelectric property. A piezoelectric coefficient d31∼−300 pC/N, acceptable for piezoelectric applications, was measured.