Bonding and wetting in non-reactive metal/SiC systems: weak or strong interfaces?

Wetting (contact angles) and bonding (work of adhesion) of Ag and binary Ag-Si alloys on basal planes of monocrystalline α-SiC are studied by the sessile drop technique under a static atmosphere of purified helium at 1200°C. The analysis of the experimental results allows the role of each component of the alloy on the interfacial energies of the system and on wetting to be determined. The conclusions drawn for the Ag/SiC couple are used to explain wetting and bonding in other metal/SiC systems.