Semiconductor nanowires: synthesis, structure and properties

Highly pure, ultra long and uniform-sized semiconductor nanowires in bulk-quantity have been synthesized by novel methods of laser ablation and thermal evaporation of semiconductor powders mixed with metal or oxide catalysts. Transmission electron microscopic study shows that decomposition of semiconductor sub-oxides and the defect structure play an important role in enhancing the formation and growth of high-quality semiconductor nanowires. The morphology, microstructure, optical and electrical properties of the nanowires have been characterized systematically by Raman scattering, photoluminescence and field emission. A new growth mechanism, namely oxide-assisted growth, is proposed based on the microstructure and different morphologies of the nanowires observed.