Influence of intrinsic stresses on crystallographic defects distribution in Cz-Si wafers

The influence of intrinsic stress in silicon wafers during the Czochralski crystal growth process and during technological processing of semiconductor devices on defect distribution and yield was investigated. The determination method of intrinsic defect distribution by applying subtle flatness measurements (GFLT parameter) is proposed. Results of measurements are compared with calculated stress distributions. Defect density distributions measured on wafers subjected to technological processes are related to intrinsic stress distributions and electrical parameters of semiconductor devices.