Title of article
Electronic transport properties of quasicrystalline thin films
Author/Authors
Haberkern، نويسنده , , R and Khedhri، نويسنده , , K and Madel، نويسنده , , C and Hنussler، نويسنده , , P، نويسنده ,
Pages
6
From page
475
To page
480
Abstract
We focus on the question if electronic transport properties of quasicrystals can be understood by a Hume–Rothery like interaction between the atomic structure and the electronic system. Therefore, we report about composition and temperature dependent investigations of the electrical conductivity, the thermopower and the Hall effect of quasicrystalline films, mainly for i-Al–Pd–Re and i-Al–Cu–Fe and compare it to the amorphous counterparts which are known to be electronically stabilized and are much simpler to understand due to their isotropy.
ilms provide the possibility to measure the thermopower and the Hall effect at elevated temperatures up to 1000 K. Both indicate a strongly increasing charge-carrier density as a function of temperature.
Keywords
Electronic transport , Quasicrystalline films , Amorphous films , Al–Cu–Fe , Al–Pd–Re
Journal title
Astroparticle Physics
Record number
2057279
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