Feasibility study of aluminium nitride formation by nitrogen plasma source ion implantation on aluminium

Formation of aluminium nitride (AlN) on aluminium surface by nitrogen plasma source ion implantation (PSII) technique is an active area of research. The present work is being carried out with a view to investigate the formation of AlN on Al surface by nitrogen PSII at low energies of 3 and 10 keV with ion dose ∼1018 ions/cm2. Surface characterisation by X-ray photoelectron spectroscopy shows that nitrogen is bound to aluminium. Glancing angle X-ray diffraction study, has been performed on PSII treated Al surface, which shows the presence of crystalline AlN.