In situ interface characterization of silicon surface in fluoride media

The porous Si/HF-electrolyte junction has been studied by capacitance (C)–voltage (V) and current (I)–voltage (V) measurements. The observed current under forward bias shows an exponential increase like a Schottky diode with two oscillations around 1.0 and 2.4 V (SCE), respectively, whereas the reverse bias current shows negligible contribution. The low-frequency capacitance spectrum exhibits a peak structure in forward bias regime, which can be ascribed to the charge trapping/detrapping at Fermi level of porous Si under forward bias. The potential and charge distribution for a p-semiconductor/electrolyte junction is discussed