Title of article
Indentation induced amorphization in gallium arsenide
Author/Authors
Li، نويسنده , , Z.C. and Liu، نويسنده , , L and Wu، نويسنده , , X and He، نويسنده , , L.L. and Xu، نويسنده , , Y.B، نويسنده ,
Pages
4
From page
21
To page
24
Abstract
Vickers indentations were carried out on the surface of GaAs single crystal with the load of 0.049 N and were observed using high-resolution electron microscopy in the present experiment. The experimental results reveal that many defects such as dislocation, microtwin and stacking-fault occurred and amorphization took place beneath the indentation. High-pressure induced amorphization and shear deformation induced amorphization were proposed for the transformation from crystalline to amorphous structure.
Keywords
Indentation , amorphization , Gallium arsenide
Journal title
Astroparticle Physics
Record number
2061572
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