Title of article :
III–V semiconductor properties for high temperature electronics
Author/Authors :
Hartnagel، نويسنده , , Hans L.، نويسنده ,
Abstract :
A reliabily operating electronic circuitry for environmental temperatures up to 500 °C requires a satisfactorily wide energy gap, a good material stability and a suitable technology. These three points are reviewed regarding III–V semiconductors. Experimental results with AlxGa1−xAs are reviewed, which are usually monolithically associated with various types of sensors.
Keywords :
Sensors , Gallium arsenide , Heterostructures , High temperature electronics
Journal title :
Astroparticle Physics