Author/Authors :
Andreev، نويسنده , , A.N. and Anikin، نويسنده , , M.M. and Zelenin، نويسنده , , V.V. and Ivanov، نويسنده , , P.A. and Lebedev، نويسنده , , A.A. and Rastegaeva، نويسنده , , M.G. and Savkina، نويسنده , , N.S. and Strelʹchuk، نويسنده , , A.M. and Syrkin، نويسنده , , A.L. and Chelnokov، نويسنده , , V.E.، نويسنده ,
Abstract :
Voltage stabilitrons based on 6H-SiC p-n structures produced by the open-system sublimation technique have been fabricated. Stabilization voltages were in the range 4–50 V. Operating currents were from 1 to 100 mA. Differential resistance was in the range 10–20 Ω at 100 mA current. Upper ambient temperature was 300 °C.
