Andreev، نويسنده , , A.N. and Strelʹchuk، نويسنده , , A.M. and Savkina، نويسنده , , N.S. and Snegov، نويسنده , , F.M. and Chelnokov، نويسنده , , V.E.، نويسنده ,
Pages :
4
From page :
194
To page :
197
Abstract :
6H-SiC dinistors based on epitaxial layers grown by sublimation epitaxy were fabricated. Parameters of these devices were studied at the temperatures 500–800 K.
