Author/Authors :
Syrkin، نويسنده , , A.L. and Andreev، نويسنده , , A.N. and Lebedev، نويسنده , , A.A. and Rastegaeva، نويسنده , , M.G. and Chelnokov، نويسنده , , V.E.، نويسنده ,
Abstract :
This work makes a comparison of some experimental data on surface barrier height with calculations based on classical models of surface barrier formation in semiconductor-metal structures. We have estimated the dependences of surface barrier height on surface states density, the value of Fermi level surface “pinning”, metal workfunction and uncompensated donors concentration. These calculations together with available experimental data made it possible to estimate surface properties of real 6H-SiC-metal structures.
Keywords :
Schottky barrier , Surface and interface states , silicon carbide , surface energy
