New investigation of III–V compounds by the low-angle mid-IR lightscattering technique

The results of recent investigations of InP and GaAs single crystals by means of the low-angle mid-IR light-scattering technique are presented in this paper. Main attention is paid to the influence of some exposures to wafers, such as ion implantation, electron irradiation, vapor-phase epitaxy and annealing, on the properties of the large-scale accumulations of electrically active defects in crystal volume. The images of InP an GaAs crystals obtained by scanning low-angle light-scattering microscopy are published for the first time.