Author/Authors :
Jiro Temmyo، نويسنده , , Jiro and Kuramochi، نويسنده , , Eiichi and Sugo، نويسنده , , Mitsuru and Nishiya، نويسنده , , Teruhiko and Nِtzel، نويسنده , , Richard and Tamamura، نويسنده , , Toshiaki، نويسنده ,
Abstract :
A self-organization phenomenon of a strained InGaAs/AlGaAs system on a GaAs(311)B substrate during metalorganic vapour-phase epitaxial growth is briefly described, and nanoscale confinement lasers with self-organized InGaAs quantum disks as active region are mentioned. Continuous-wave operation of strained InGaAs quantum disk lasers is achieved at room temperature. The threshold current is around 20 mA, which is considerably lower than that of a reference double-quantum-well laser on a GaAs(100) substrate grown side by side. However, the light output vs. the driving current exhibits a pronounced tendency towards saturation compared with that of the (100) quantum well laser.
Keywords :
Quantum structures , Semiconductor devices , Gallium arsenide , Metal-organic chemical vapour deposition (MOCVD)
