Noise characteristics of electro-absorptive logic device utilizing asymmetric Fabry-Perot etalon structure in high optical power

We studied the noise characteristics of a symmetric self electro-optic effect device (S-SEED) with an impedance-matched asymmetric Fabry-Perot cavity and extremely shallow quantum wells (AE-SEED). The device characteristics such as the signal tolerance and the bitrate in cascaded optical logic gates are determined by the parameters including the reflection change ΔR and the contrast ratio CR during the high power operation. The noise characteristics of an AE-SEED were compared with that of a conventional E-SEED. When there was no power fluctuation in the reading beam, the conventional E-SEED showed a higher bitrate. However, when fluctuation was introduced, as is inevitable in the real world, the performance of the AE-SEED as a logic gate was much better and showed higher a bitrate than the E-SEED.