Author/Authors :
Lee، نويسنده , , H.J. and Tse، نويسنده , , M.S. and Radhakrishnan، نويسنده , , K. and Prasad، نويسنده , , K. and Weng، نويسنده , , J. and Yoon، نويسنده , , S.F and Zhou، نويسنده , , X. and Tan، نويسنده , , H.S.، نويسنده ,
Abstract :
We have studied the effect of the Ge-to-Ni ratio on the contact resistance of the Ni/Ge/Au/Ni/Au contact metallization for GaAs/AlxGa1 − xAs/InyGa1−yAs heterostructures used for pseudomorphic heterojunction field effect transistors (HFETs). An optimal atomic ratio of Ge to Ni of around 1.0 is observed to yield a smooth surface morphology with low contact resistance suitable for AlxGa1 − xAsInyGa1−yAs HFET fabrication.
Keywords :
Heterostructures , contact resistance , Semiconductor devices , Gallium arsenide
