Title of article
Charge capture in AlGaAsGaAs heterostructures with disordered antidot lattice
Author/Authors
Basmaji، نويسنده , , P. and Gusev، نويسنده , , G.M. and Lubyshev، نويسنده , , D.I. and de P.A. Silva، نويسنده , , M. and Rossi، نويسنده , , J.C. and Nastaushev، نويسنده , , Yu.V. and Baklanov، نويسنده , , M.R.، نويسنده ,
Pages
3
From page
322
To page
324
Abstract
We have observed hot electron trapping by DX centers in a mesoscopic sample with disordered antidot lattice. Depending on the maximum applied electric field the potential barriers for trajectories along the sample will increase. The maximum total captured charge is approximately equal to 50 electron.
Keywords
Heterostructures
Journal title
Astroparticle Physics
Record number
2063603
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