Title of article :
Charge capture in AlGaAsGaAs heterostructures with disordered antidot lattice
Author/Authors :
Basmaji، نويسنده , , P. and Gusev، نويسنده , , G.M. and Lubyshev، نويسنده , , D.I. and de P.A. Silva، نويسنده , , M. and Rossi، نويسنده , , J.C. and Nastaushev، نويسنده , , Yu.V. and Baklanov، نويسنده , , M.R.، نويسنده ,
Pages :
3
From page :
322
To page :
324
Abstract :
We have observed hot electron trapping by DX centers in a mesoscopic sample with disordered antidot lattice. Depending on the maximum applied electric field the potential barriers for trajectories along the sample will increase. The maximum total captured charge is approximately equal to 50 electron.
Keywords :
Heterostructures
Journal title :
Astroparticle Physics
Record number :
2063603
Link To Document :
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