Title of article :
Stress-induced oxygen precipitation in CzSi
Author/Authors :
Misiuk، نويسنده , , A. and Surma، نويسنده , , B. and Hartwig، نويسنده , , J.، نويسنده ,
Abstract :
Stress-induced oxygen precipitation effects in silicon were investigated after annealing as-grown CzSi samples at up to 1620 K under hydrostatic pressure up to 1.35 × 109 Pa. Depending on the treatment conditions, uniform stress can considerably influence oxygen precipitation. An explanation of stress-stimulated oxygen precipitation is proposed.
Keywords :
oxygen precipitation , Defect formation , high pressure , Silicon
Journal title :
Astroparticle Physics
