Characterization of SOI-SIMOX structures using Brillouin light scattering

Silicon on insulator structures prepared using separation by implanted oxygen technology are studied by means of Brillouin light scattering. The deviation in the experimental wave velocity for shear horizontal modes guided within the SiO2 buried layer is ascribed to the presence of silicon inclusions dispersed in the oxide matrix. Transmission electron microscopy (TEM) observations support this assumption. l describing the effect of the silicon inclusions by means of an effective medium theory based on the Eshelby method is presented. The inclusion volume fraction is determined and compared with the TEM estimate.