Author/Authors :
Koumetz، نويسنده , , S. and Marcon، نويسنده , , J. and Ketata، نويسنده , , K. and Ketata، نويسنده , , M. and Lefebvre، نويسنده , , F. and Martin، نويسنده , , P. and Launay، نويسنده , , P.، نويسنده ,
Abstract :
Be diffusion during post-growth annealing has been investigated from InGaAs epitaxial layers grown between InGaAs undoped layers.
ral Substitutional-Interstitial Diffusion mechanism is proposed to explain the observed concentration profiles and related Be diffusion. The concentration dependent diffusivity has also been covered to perform an improved data fitting of Be diffusion profiles.
Keywords :
BE , Fermi-level , diffusion , Depth profile , InGaAs , Diffusivity , Activation energy
