Author/Authors :
Tomm، نويسنده , , Y. and Ivaneko، نويسنده , , L. and Irmscher، نويسنده , , K. and Brehme، نويسنده , , St. and Henrion، نويسنده , , Reynée W. and Sieber-Blum، نويسنده , , I. and Lange، نويسنده , , H.، نويسنده ,
Abstract :
Undoped and doped β-FeSi2 single crystals were prepared by chemical transport reaction using iodine as transporting agent. The doping elements used were Co, Mn, Cr and Ni. The effect of impurities was studied by EPR and electrical measurements. The impurities substitute Fe on its two inequivalent lattice sites. Electrical measurements indicated p-type behavior. For Cr-doped samples an activation energy of 75 meV was determined. Optical studies on (Fe1−xCox)Si2(x ⩽ 0.15) layers prepared by ion implantation into Si(100) showed a monotonous decrease of the gap.
Keywords :
Semiconductors , Doping , Iron disilicide , Suicides , doping effects
