Author/Authors :
Pearton، نويسنده , , S.J. and Abernathy، نويسنده , , C.R. and Ren، نويسنده , , F. and Shul، نويسنده , , R.J. and Kilcoyne، نويسنده , , S.P. and Hagerott-Crawford، نويسنده , , M. and Zolper، نويسنده , , J.C and Wilson، نويسنده , , R.G. and Schwartz، نويسنده , , R.G. and Zavada، نويسنده , , J.M.، نويسنده ,
Abstract :
Advances in GaN-based electronic and photonic devices requires improved patterning methods, better Ohmic contacts and higher p-type dopong levels. In this paper, new developments in dry and wet etching. Ohmic contacts and epitaxial growth of III–V nitrides are reported. We find that high ion density plasmas produce etch rates up to a factor of ten higher than conventional reactive ion etching using the same Cl2-based chemistries. Similarly, a new wet etch for AlN has been discovered. These new processes make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transitors with improved InN Ohmic contacts.
Keywords :
Dry etching , GaN , Wet etching , III–V nitrides , Ohmic Contacts
