Title of article
Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients
Author/Authors
Kami?ski، نويسنده , , Catherine P. and Pawlowski، نويسنده , , M. and ?wirko، نويسنده , , R. and Palczewska، نويسنده , , M. and Kozlowski، نويسنده , , R.، نويسنده ,
Pages
4
From page
213
To page
216
Abstract
A new digital approach to PICTS technique was applied to study deep levels in undoped SI GaAs and Fe-doped InP. For SI Fe-doped InP, the 0.64-eV trap related to Fe2 + /Fe3 + acceptor level as well as the 0.53-eV trap attributed to a native defect, were observed. For SI undoped GaAs, three traps: T1 (0.58 eV), T2 (0.66 eV) and T3 (0.73 eV) assigned to the known centers EL3, HL9, and EL2, respectively, were resolved. The studies were completed by the electron spin resonance (ESR) measurements.
Keywords
Photoinduced current , electron spin resonance , Deep level transient spectroscopy
Journal title
Astroparticle Physics
Record number
2064104
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