Author/Authors :
Pِykkِ، نويسنده , , S. and Puska، نويسنده , , M.J. and Korhonen، نويسنده , , T. and Nieminen، نويسنده , , R.M.، نويسنده ,
Abstract :
The origin of the p-type doping problem in ZnSe is still controversial in spite of the numerous models presented. We have studied the electronic and structural properties of various nitrogen-related defects in ZnSe using the pseudopotential total-energy methods. The role of the defect complexes formed by nitrogen impurities and native defects in acceptor compensation is discussed.
