Title of article
Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001) GaAs
Author/Authors
Mazzer، نويسنده , , M. and Calcagnile، نويسنده , , L. and Leo، نويسنده , , G. and Salviati، نويسنده , , G. and Zanotti-Fregonara، نويسنده , , C. and Lovergine، نويسنده , , N. and Prete، نويسنده , , P. and Imbriani، نويسنده , , G. and Cingolani، نويسنده , , R. and Mancini، نويسنده , , A.M. and Romanato، نويسنده , , F. and Drigo، نويسنده , , A.V.، نويسنده ,
Pages
5
From page
97
To page
101
Abstract
The optimisation of ZnSe/ZnS multi-quantum-wells grown by metal-organic vapour phase epitaxy (MOVPE) for lasers was carried out with the help of structural and electro-optical characterisation techniques. Good-quality quantum wells were obtained using a lower growth temperature (315 °C) with respect to the ZnS buffer layer (342 °C). Although even the best samples contain a high density of microtwins crossing the active layer, the luminescence efficiency is quite good and the threshold for the stimulated emission at 10 K is as low as 170 kW cm−2.
Keywords
lasers , Multi-quantum wells , Molecular Beam Epitaxy
Journal title
Astroparticle Physics
Record number
2064211
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