Author/Authors :
Manar، نويسنده , , A. and Chergui، نويسنده , , A. and Guennani، نويسنده , , D. and Ohlmann، نويسنده , , D. and Cloitre، نويسنده , , T. and Aulombard، نويسنده , , R.L.، نويسنده ,
Abstract :
Epitaxial layers of ZnSe and ZnS have been grown on GaAs (100) substrates by low-pressure metal-organic vapor phase epitaxy (MOVPE) and etched out from their substrates. The optical quality of the layers has been investigated at 2 K by low-intensity reflection, transmission and photoluminescence measurements.
h excitation intensities, the near-band-edge luminescence has been determined in both ZnS and ZnSe samples. Exciton and biexciton contributions have been studied.
