Analysis of vaporization kinetics of group-III nitrides

On the basis of experimental data on Knudsen and Langmuir evaporation of group-III nitrides, the role of surface kinetics is analyzed. Different behavior of nitrides compared with other III–V compounds is assumed to originate from the existence of a significant kinetic barrier for adsorption/desorption of molecular nitrogen. Thermodynamic properties of GaN, AlN and InN are refined and evaporation/condensation coefficients of these compounds are obtained as functions of temperature. The trends in nitrides vaporization are analyzed using a model accounting for the kinetics of the evaporation process. The theoretical predictions are compared with those available in the literature experimental data.