Title of article :
Electronic structure and temperature dependence of excitons in GaN
Author/Authors :
Monemar، نويسنده , , B. and Buyanova، نويسنده , , I.A. and Bergman، نويسنده , , J.P. and Amano، نويسنده , , H. and Akasaki، نويسنده , , I.، نويسنده ,
Pages :
4
From page :
172
To page :
175
Abstract :
The influence of epitaxial strain and temperature on free exciton properties for GaN is discussed, in relation to optical spectra. The exciton-polariton coupling is also briefly discussed, from the temperature dependence of the LO phonon replicas.
Keywords :
Bound exciton , Electronic structure , Photoluminescence
Journal title :
Astroparticle Physics
Record number :
2064248
Link To Document :
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