Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor

The recent surge of interest, and subsequent material refinement, in the Ill-nitrides for optoelectronic and power applications has led to the development of several high-quality commercial devices such as light emitting diodes and the recently announced laser diode. Most of these devices, and much of the GaN research, has been completed on single-wafer metal-organic chemical vapor deposition (MOCVD) systems. For low cost and high yield, production-scale equipment is necessary in order to fully develop this expanding market. EMCORE, as a manufacturer of production-scale MOCVD equipment, has had an on-going research effort in the development and refinement of deposition systems for the growth of GaN. EMCORE has demonstrated high-quality p-doping of GaN with resistivities as low as 0.1 Ω cm. EMCORE has also demonstrated the growth of high-quality InGaN alloys and heterostructures, including quantum wells. In this paper, we report on the reproducibility of these films on a run-to-run and wafer-wafer basis. The high degree of reproducibility observed for these films will make the mass production of GaN-based devices cost effective.