Author/Authors :
Vermaut، نويسنده , , P. and Ruterana، نويسنده , , P. and Nouet، نويسنده , , G. and Salvador، نويسنده , , A. and Morkoç، نويسنده , , H.، نويسنده ,
Abstract :
The atomic structure of the prismatic defects in GaN layers grown on 6H-SiC by electron cyclotron assisted MBE has been determined. High resolution images have been matched to Drumʹs model, which, along the [0001] projection, corresponds to 8 and 4 atoms cycles. The 1/2〈101〉 fault vector is parallel to the fault plane.
