Critical issues of III–V compound semiconductor processing

We review some of the key processing needs for fabrication of next-generation electronic and photonic devices from III–V semiconducctors. These include high rate plasma etching capable of smooth controlled pattern transfer, selective wet etching solutions for the InGaAlP and InGaAlN materials systems and improved ohmic and rectifying contacts. The achievement of high reliability and acceptable yields requires low thermal budgets and an absence of residual damage from deposition, etch or implant processes.