Author/Authors :
Kimura، نويسنده , , M. and Qin، نويسنده , , Z. and Udono، نويسنده , , H. and Dost، نويسنده , , S. and Tanaka، نويسنده , , A. and Sukegawa، نويسنده , , T.، نويسنده ,
Abstract :
A computational model for mass transport occurring during the conversion of GaAs to GaAsP on a GaP substrate is presented. The mass transport equations in the liquid and solid phases, and the phase diagram together with appropriate interface and boundary conditions were solved numerically by the finite element method (FEM). Numerical solutions agree with experimental results and explain well the conversion phenomenon.
