Author/Authors :
Berchenko، نويسنده , , N.N. and Izhnin، نويسنده , , I.I. and Savchyn، نويسنده , , V.P. and Stakhira، نويسنده , , J.M. and Voitsekhovskii، نويسنده , , A.V.، نويسنده ,
Abstract :
The possibilities of cathodoluminescence spectroscopy are illustrated by examples of the investigation of the oxide-semiconductor structures obtained by different oxidation techniques of group II, III and IV chalcogenides. The cathodoluminescence results are used directly for the phase identification and their spatial distribution determination in the oxide layer and at the interface with the semiconductor.
Keywords :
Cathodoluminescence spectroscopy , Metal oxide semiconductor , X-ray photoelectron spectroscopy , Auger electron spectroscopy
