Author/Authors :
Svitashev، نويسنده , , K.K. and Shvets، نويسنده , , V.A. and Mardezhov، نويسنده , , A.S. and Dvoretsky، نويسنده , , S.A. and Sidorov، نويسنده , , Yu.G. and Mikhailov، نويسنده , , N.N. and Spesivtsev، نويسنده , , E.V. and Rychlitsky، نويسنده , , S.V.، نويسنده ,
Abstract :
The results of the consistent use of in-situ and ex-situ ellipsometry as a control of MCT/CdTe/GaAs heterostructures growth by molecular beam epitaxy (MBE) are presented. It is shown that ellipsometry is able to control the quality of a GaAs substrate preparation prior to epitaxy, to measure the buffer layers and MCT films growth rate, to monitor in-situ composition and surface morphology during deposition process. Temperature measurements of CdTe dielectric functions were made which show the possibility of in-situ determination of surface temperature.
