Author/Authors :
Fornari، نويسنده , , R. and Gilioli، نويسنده , , E. and Sentiri، نويسنده , , A. and Mignoni، نويسنده , , G. and Avella، نويسنده , , M. and Jiménez، نويسنده , , J. and Alvلrez، نويسنده , , A. and Gonzلlez، نويسنده , , M.A.، نويسنده ,
Abstract :
Iron doped InP wafers have been submitted to different thermal treatments. The consequences of these treatments in terms of electrical properties and homogeneity were studied by mean of different experimental techniques: Hall effect, DSL and BCA chemical etching and scanning photocurrent. The electric compensation and the homogeneity are shown to be improved by the thermal treatments. These results are discussed on the bases of donor removal and iron migration to the wafer edges.
