Author/Authors :
Buhrig، نويسنده , , E. and ، نويسنده , , Frank، نويسنده , , C and Hannig، نويسنده , , C. and Hoffmann، نويسنده , , B.، نويسنده ,
Abstract :
Semi-insulating 2″ GaAs single crystals have been grown using the vertical gradient freeze (VGF) method. The melt was completely encapsulated using B2O3 (LE-VGF) to minimize the interaction with the crucible material. In this way, a homogeneous etch pit density (EPD) below 1000 cm−2 was obtained. Different annealing regimes were used to optimize the homogeneity of the electrical properties and precipitates.
