Author/Authors :
Stradling، نويسنده , , R.A. and Chung، نويسنده , , S.J. and Ciesla، نويسنده , , C.M. and Langerak، نويسنده , , C.J.M. and Li، نويسنده , , Y.B. and Malik، نويسنده , , T.A. and Murdin، نويسنده , , B.N. and Norman، نويسنده , , A.G. and Phillips، نويسنده , , C.C. and Pidgeon، نويسنده , , C.R. and Pullin، نويسنده , , M.J. and Tang، نويسنده , , P.J.P. and Yuen، نويسنده , , W.T.، نويسنده ,
Abstract :
The growth and evaluation of InAs/GaSb/AlSb quantum wells and InAs1 − xSbx/InAs strained layer superlattices are discussed. A characteristic of the InAs/GaSb/AlSb combinations is their high mobility and the applications are mainly concerned with optimising the mobility. The InAs1 − xSbx/InAs strained-layer superlattices have rather long non-radiative lifetimes despite inferior structural quality, as demonstrated by time-resolved pump-probe measurements with a free electron laser.
