Author/Authors :
Richter، نويسنده , , E. and Kurpas، نويسنده , , P. and Sato، نويسنده , , Stephen M. and Trapp، نويسنده , , M. and Zeimer، نويسنده , , U. and Hنhle، نويسنده , , S. and Weyers، نويسنده , , M.، نويسنده ,
Abstract :
Hydrogen incorporation into heavily carbon-doped GaAs grown by metal-organic vapour phase epitaxy using carbon tetrabromide (CBr4) has been studied. In the base layer of as-grown GaInP/GaAs heterojunction bipolar transistors (HBTs), about 20% of the carbon acceptors are found to be passivated by hydrogen. The outdiffusion of this hydrogen during an ex situ annealing at 450 °C in nitrogen, which is effective for carbon-doped single layers, is blocked by n-type capping layers in HBTs. An in situ annealing step was found to be suitable to reduce the acceptor passivation in HBTs to about 10%.
