Author/Authors :
Papavassiliou، نويسنده , , C. and Georgakilas، نويسنده , , A. and Aperathitis، نويسنده , , E. and Krasny، نويسنده , , H. and Lِchtermann، نويسنده , , E. and Panayotatos، نويسنده , , P.، نويسنده ,
Abstract :
Silicon substrates were cut at tilt angles ranging from 0 to 9 ° off the (100) plane, and heteroepitaxial GaAs layers were grown by molecular beam epitaxy (MBE). The d.c. and RF performance of MESFET devices defined on these layers was used as a measure of the optimum substrate tilt angle. Best performance was observed between 3 and 4.5 ° tilt. MESFET device performance was also compared as silicon substrate resistivity was varied from 10−3 to 103 Ω cm. A minimum resistivity of 10 Ω cm is found to be necessary for high performance heteroepitaxial MESFET devices. No effect of substrate conductivity type on device performance was observed.
