• Title of article

    Laser induced deposition of tungsten and copper

  • Author/Authors

    Meunier، نويسنده , , Michel and Izquierdo، نويسنده , , Ricardo and Tabbal، نويسنده , , Maleck and Evoy، نويسنده , , Stéphane and Desjardins، نويسنده , , Patrick and Bernier، نويسنده , , Marie-Hélène and Bertomeu، نويسنده , , Joan and Elyaagoubi، نويسنده , , Nada and Suys، نويسنده , , Marc and Sacher، نويسنده , , Edward and Yelon، نويسنده , , Arthur، نويسنده ,

  • Pages
    8
  • From page
    200
  • To page
    207
  • Abstract
    We present recent results obtained in our laboratory on the laser processing for deposition of tungsten and copper. Four processes are presented. (1) An Ar+ laser or a diode laser are used in a direct writing mode to produce W and WSix lines from WF6 reduced by H2 and/or SiH4, and deposited on silicon, TiN, SiOxNy and polyimide. (2) Pure α-W films were also deposited on GaAs by KrF excimer laser-induced deposition using a WF6/SiH4/H2 gas mixture. (3) Very uniform, shiny metallic copper films, with Cu/C ratios up to 17 were deposited on TiN and fluoropolymer substrates by the KrF excimer laser-assisted decomposition of Cu(hfac)(TMVS). (4) Finally, we have studied the Ar+ and diode laser direct writing of Pd and Au for the selective activation of the electroless plating of Cu.
  • Keywords
    Copper , GaAs , In situ processing , Laser microsurgery , Laser processing , microelectronics , Packaging , Silicon , Tungsten
  • Journal title
    Astroparticle Physics
  • Record number

    2064612