Author/Authors :
Meunier، نويسنده , , Michel and Izquierdo، نويسنده , , Ricardo and Tabbal، نويسنده , , Maleck and Evoy، نويسنده , , Stéphane and Desjardins، نويسنده , , Patrick and Bernier، نويسنده , , Marie-Hélène and Bertomeu، نويسنده , , Joan and Elyaagoubi، نويسنده , , Nada and Suys، نويسنده , , Marc and Sacher، نويسنده , , Edward and Yelon، نويسنده , , Arthur، نويسنده ,
Abstract :
We present recent results obtained in our laboratory on the laser processing for deposition of tungsten and copper. Four processes are presented. (1) An Ar+ laser or a diode laser are used in a direct writing mode to produce W and WSix lines from WF6 reduced by H2 and/or SiH4, and deposited on silicon, TiN, SiOxNy and polyimide. (2) Pure α-W films were also deposited on GaAs by KrF excimer laser-induced deposition using a WF6/SiH4/H2 gas mixture. (3) Very uniform, shiny metallic copper films, with Cu/C ratios up to 17 were deposited on TiN and fluoropolymer substrates by the KrF excimer laser-assisted decomposition of Cu(hfac)(TMVS). (4) Finally, we have studied the Ar+ and diode laser direct writing of Pd and Au for the selective activation of the electroless plating of Cu.
Keywords :
Copper , GaAs , In situ processing , Laser microsurgery , Laser processing , microelectronics , Packaging , Silicon , Tungsten
