Title of article
Laser induced deposition of tungsten and copper
Author/Authors
Meunier، نويسنده , , Michel and Izquierdo، نويسنده , , Ricardo and Tabbal، نويسنده , , Maleck and Evoy، نويسنده , , Stéphane and Desjardins، نويسنده , , Patrick and Bernier، نويسنده , , Marie-Hélène and Bertomeu، نويسنده , , Joan and Elyaagoubi، نويسنده , , Nada and Suys، نويسنده , , Marc and Sacher، نويسنده , , Edward and Yelon، نويسنده , , Arthur، نويسنده ,
Pages
8
From page
200
To page
207
Abstract
We present recent results obtained in our laboratory on the laser processing for deposition of tungsten and copper. Four processes are presented. (1) An Ar+ laser or a diode laser are used in a direct writing mode to produce W and WSix lines from WF6 reduced by H2 and/or SiH4, and deposited on silicon, TiN, SiOxNy and polyimide. (2) Pure α-W films were also deposited on GaAs by KrF excimer laser-induced deposition using a WF6/SiH4/H2 gas mixture. (3) Very uniform, shiny metallic copper films, with Cu/C ratios up to 17 were deposited on TiN and fluoropolymer substrates by the KrF excimer laser-assisted decomposition of Cu(hfac)(TMVS). (4) Finally, we have studied the Ar+ and diode laser direct writing of Pd and Au for the selective activation of the electroless plating of Cu.
Keywords
Copper , GaAs , In situ processing , Laser microsurgery , Laser processing , microelectronics , Packaging , Silicon , Tungsten
Journal title
Astroparticle Physics
Record number
2064612
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