Laser processing of II–VI compounds for improved doping: application to ZnSe:N

II–VI materials have not been as widely used or studied as the III–V and elemental semiconductors, but are nevertheless useful and interesting as well. Obtaining adequate doping for good device properties in the wide-gap II–VIs has been a persistent problem. We focus on this aspect here, with particular emphasis on obtaining p-type ZnSe with N doping. We shall discuss reasons for trying non-equilibrium incorporation, as well as our work on excimer laser processing as a means of accomplishing this. We also discuss some important differences in decomposition properties between II–VI and III–V compounds.