Title of article
Fully depleted SOI-CMOS technology for high temperature IC applications
Author/Authors
B. Gentinne، نويسنده , , B. and Eggermont، نويسنده , , J.-P. and Flandre، نويسنده , , D. and Colinge، نويسنده , , J.-P.، نويسنده ,
Pages
7
From page
1
To page
7
Abstract
Thin-film fully depleted complementary metal oxide semiconductor (CMOS) silicon-on-insulator (SOI) technology is currentlly considered as the best mature contender for high-temperature analog or mixed-mode IC applications in the 200–400 °C temperature range. This is demonstrated by measurement results of the high-temperature performances of several operational transconductance amplifiers (OTA) with increasing architecture complexity. High-temperature design techniques are also proposed and validated by measurements.
Keywords
High-temperature operation , integrated circuits , MOS devices , Silicon-on-insulator
Journal title
Astroparticle Physics
Record number
2064621
Link To Document