Analysis of structural imperfections of silicon on insulator structures

Silicon-on-insulator structures prepared using the separation by implanted oxygen technology are studied by means of Brillouin light scattering. The deviation in the experimental wave velocity for modes guided within the SiO2 buried layer is ascribed to the presence of silicon inclusions dispersed in the oxide matrix. The presence of inclusions is taken into account by means of an effective medium theory which allows to determine the inclusion volume fraction and the anisotropy of their orientation.