Title of article :
III–V compounds for high-temperature operation
Author/Authors :
Hartnagel، نويسنده , , Hans Ludwig، نويسنده ,
Pages :
5
From page :
47
To page :
51
Abstract :
The latest results obtained by a number of authors from various laboratories are reviewed. A variety of sensors operating at increased temperatures have been developed in view of automotive and aircraft applications. Here, the special physical properties found with compound semiconductors are exploited with often good advantage. Similarly, electronic circuits have been made and evaluated at increased temperatures. Of particular interest is of course when microwave radar circuits can also be used with such hot environments, an example being hot-liquid level monitoring by FMCW radar. The semiconductors employed have not only been the classical GaAlAs, but also heterostructures with high conduction or valance-band offsets and materials such as GaN.
Keywords :
Microwave radar circuits , High-temperature electronics , III–V semiconductors , GaN , GaAlAs
Journal title :
Astroparticle Physics
Record number :
2064637
Link To Document :
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