High temperature/high power Schottky diodes

The high temperature performance of 100 and 300 V power GaAs Schottky diodes is compared to that of equivalent Al0.45Ga0.55As/GaAs heterostructure devices. Both types of devices are shown to be operational to ~ 250 °C, with reverse current densities of 0.1 A cm−2 and 1 A cm−2 at 250 °C for the 100 and 300 V GaAs devices respectively.