Title of article
High temperature/high power Schottky diodes
Author/Authors
Wright، نويسنده , , N.G. and OʹNeill، نويسنده , , A.G. and Johnson، نويسنده , , C.M.، نويسنده ,
Pages
4
From page
57
To page
60
Abstract
The high temperature performance of 100 and 300 V power GaAs Schottky diodes is compared to that of equivalent Al0.45Ga0.55As/GaAs heterostructure devices. Both types of devices are shown to be operational to ~ 250 °C, with reverse current densities of 0.1 A cm−2 and 1 A cm−2 at 250 °C for the 100 and 300 V GaAs devices respectively.
Keywords
Schottky diode , GaAs diode , High temperature/high power technology
Journal title
Astroparticle Physics
Record number
2064642
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