Author/Authors :
Alause، نويسنده , , H. and Knap، نويسنده , , W. and Azema، نويسنده , , S. Contreras and Bluet، نويسنده , , J.M. and Sadowski، نويسنده , , M.L. and Huant، نويسنده , , S. and Young، نويسنده , , J. and Khan، نويسنده , , M. Asif and Chen، نويسنده , , Q. and Shur، نويسنده , , M.، نويسنده ,
Abstract :
Cyclotron resonance studies of two-dimensional electrons confined at the GaN/AlGaN interface are presented. The value of the 2D-electron cyclotron mass is determined and discussed in view of non-parabolicity effects. The influence of non-parabolicity is enhanced by the spatial confinement of electrons and is calculated in the triangular well approximation. After subtraction of non-parabolicity corrections, the same mass 0.226 m0 with 2% precision is obtained for 2D and bulk electrons in GaN.
Keywords :
electronic band structure , Heterojunctions , Semiconductors , Cyclotron resonance
