Title of article
On the calculation of dielectric and optical properties of wide band gap semiconductors
Author/Authors
Tikhonov، نويسنده , , Sergey K. and Davydov، نويسنده , , Sergey Yu. and Ioffe، نويسنده , , A.F.، نويسنده ,
Pages
2
From page
99
To page
100
Abstract
The bond orbital model has been used to calculate linear and quadric dielectric susceptibility, electro-optical coefficient and static permittivity for diamond and cubic modification of SiC, BN, AlN, and GaN.
Keywords
Bond orbital model , Optical properties , Semiconductors
Journal title
Astroparticle Physics
Record number
2065112
Link To Document