Title of article :
On the calculation of dielectric and optical properties of wide band gap semiconductors
Author/Authors :
Tikhonov، نويسنده , , Sergey K. and Davydov، نويسنده , , Sergey Yu. and Ioffe، نويسنده , , A.F.، نويسنده ,
Abstract :
The bond orbital model has been used to calculate linear and quadric dielectric susceptibility, electro-optical coefficient and static permittivity for diamond and cubic modification of SiC, BN, AlN, and GaN.
Keywords :
Bond orbital model , Optical properties , Semiconductors
Journal title :
Astroparticle Physics
