Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions

Electrical and luminescent characteristics of epitaxial 4H-SiC p-n junctions, both prior and after ion doping (ID) with Al, were studied. The implantation of Al ions was performed in the top p-layer of the epitaxial p-n structures. It was found that the ID produces significant changes in forward current-voltage characteristics (I- V) of the structure and efficiently enhance the electroluminescence in the violet spectrum region. The scanning electron microscopy technique was used to determine p-n junction position in the structure and carrier diffusion lengths in the vicinity of the p-n junction. Cathodoluminescence was used to determine the region where electroluminescence was originated from.